LET16060C

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LET16060C概述

RF MOSFET Transistors RF PWR Trans LdMOST N-Ch 60W 13.8dB 1600

This RF amplifier from STMicroelectronics works in radio frequency environments and can be used to amplify and switch between electronic signals. Its maximum power dissipation is 130000 mW. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C.


得捷:
FET RF 80V 1.6GHZ M243


艾睿:
Trans RF MOSFET N-CH 80V 12A 3-Pin Case M-243


DeviceMart:
IC RF TRANS LDMOST N-CH M243


LET16060C中文资料参数规格
技术参数

频率 1.6 GHz

耗散功率 130000 mW

输出功率 60 W

增益 13.8 dB

测试电流 400 mA

输入电容Ciss 77pF @28VVds

工作温度Max 200 ℃

工作温度Min -65 ℃

耗散功率Max 130000 mW

额定电压 80 V

封装参数

引脚数 3

封装 M-243

外形尺寸

封装 M-243

其他

产品生命周期 Active

包装方式 Bulk

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买LET16060C
型号: LET16060C
描述:RF MOSFET Transistors RF PWR Trans LdMOST N-Ch 60W 13.8dB 1600

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