LF356H/NOPB

TEXAS INSTRUMENTS  LF356H/NOPB  运算放大器, 单路, 5 MHz, 1个放大器, 12 V/µs, 10V 至 36V, TO-99, 8 引脚

The is a first monolithic JFET input Operational Amplifier to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors BI-FET Technology. This amplifier features low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The LF356 amplifier is also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

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Replace expensive hybrid and module FET op-amps

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Rugged JFETs allow blow-out free handling compared with MOSFET input devices

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Offset adjust does not degrade drift or common-mode rejection as in most monolithic amplifiers

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New output stage allows use of large capacitive loads 5000pF without stability problems

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Internal compensation and large differential input voltage capability

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Military rated

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Green product and no Sb/Br

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.