MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments### MOSFET & IGBT 驱动器,Texas Instruments
MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments
得捷:
IC GATE DRVR HALF-BRIDGE 8SOIC
立创商城:
半桥 MOSFET 灌:1A 拉:1A
欧时:
Texas Instruments LM5109MA/NOPB 双 半桥 MOSFET 功率驱动器, 1A, 8 → 14 V电源, 8引脚 SOIC封装
贸泽:
Gate Drivers 100V / 1A Peak Half Bridge Gate Driver 8-SOIC
艾睿:
Think of Texas Instruments&s; LM5109MA/NOPB power driver the next time you are in need of a tool that can power your gates on and off. This device has a maximum propagation delay time of 29typ ns. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 8 V and a maximum of 14 V.
安富利:
MOSFET DRVR 100V 1A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC N Rail
Chip1Stop:
Driver 100V 1A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC Rail
Verical:
Driver 1A 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin SOIC Tube
Win Source:
IC DVR HALF-BRIDGE 100V 1A 8SOIC
电源电压DC 14.0V max
上升/下降时间 15 ns
输出接口数 2
输出电流 1 A
上升时间 15 ns
下降时间 15 ns
下降时间Max 15 ns
上升时间Max 15 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
电源电压 8V ~ 14V
电源电压Max 14 V
电源电压Min 8 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.9 mm
高度 1.45 mm
封装 SOIC-8
工作温度 -40℃ ~ 125℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
LM5109MA/NOPB TI 德州仪器 | 当前型号 | 当前型号 |
LM5109MA 德州仪器 | 完全替代 | LM5109MA/NOPB和LM5109MA的区别 |
LM5109MAX 德州仪器 | 完全替代 | LM5109MA/NOPB和LM5109MAX的区别 |
LM5109MAX/NOPB 德州仪器 | 类似代替 | LM5109MA/NOPB和LM5109MAX/NOPB的区别 |