LM5114BSD/NOPB

TEXAS INSTRUMENTS  LM5114BSD/NOPB  驱动器, MOSFET, 低压侧, 4V-12.6V电源, 7.6A输出, 12ns延迟, WSON-6

The is a single low-side Gate Driver for use with boost converters. The LM5114 is designed to drive low-side MOSFETs in boost-type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The LM5114 also has the features necessary to drive low-side enhancement mode Gallium Nitride GaN FETs. The LM5114 provides inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive in a single device type. The inputs of the LM5114 are TTL/CMOS logic compatible and withstand input voltages up to 14V regardless of the VDD voltage. The LM5114 has split gate outputs, providing flexibility to adjust the turn-ON and turnoff strength independently. The LM5114 has fast switching speed and minimized propagation delays, facilitating high-frequency operation.

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Independent source and sink outputs for controllable rise and fall times

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Matching delay time between inverting and non-inverting inputs

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TTL/CMOS logic inputs

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Up to 14V logic inputs regardless of VDD voltage

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0.23R Open-drain pull down sink output

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2R Open-drain pull-up source output

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12ns Typical propagation delay

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0.68V Input hysteresis

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2.5pF Typical low input capacitance

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Green product and no Sb/Br