L6398 系列 双 290 mA 20 V 高压侧和低压侧 驱动器 - SOIC-8
半桥 栅极驱动器 IC 反相,非反相 8-SO
得捷:
IC GATE DRVR HALF-BRIDGE 8SO
立创商城:
半桥 IGBT MOSFET 灌:290mA 拉:430mA
艾睿:
Drive a high voltage and high current line with a transistor a certain way with this L6398DTR power driver manufactured by STMicroelectronics. This device has a maximum propagation delay time of 200 ns and a maximum power dissipation of 800 mW. Its maximum power dissipation is 800 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device has a minimum operating supply voltage of 10 V and a maximum of 20 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C.
安富利:
MOSFET DRVR 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin SO N T/R
富昌:
L6398 Series Dual 290 mA 20 V 120 Ohm High and Low Side Driver - SOIC-8
Chip1Stop:
Driver 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SO N T/R
Verical:
Driver 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SO N T/R
儒卓力:
**HaBr MOSvIGBTDr 600V SO-8 SMD **
力源芯城:
高压高边和低边驱动
频率 0.8 MHz
上升/下降时间 75ns, 35ns
输出接口数 2
耗散功率 0.8 W
上升时间 120 ns
下降时间 70 ns
下降时间Max 70 ns
上升时间Max 120 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 800 mW
电源电压 10V ~ 20V
电源电压Max 21 V
电源电压Min 0.3 V
安装方式 Surface Mount
引脚数 8
封装 SO-8
封装 SO-8
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
香港进出口证 NLR