LM5114AMFX/NOPB

具有 4V UVLO 和分离输出的 7.6A/1.3A 单通道栅极驱动器 6-SOT-23 -40 to 125

General Description

The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOS FETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The LM5114 also has the features necessary to drive low-side enhancement mode Gallium Nitride GaN FETs. The LM5114 provides inverting and non-inverting inputs to satisfy require ments for inverting and non-inverting gate drive in a single device type.

Features

● Independent source and sink outputs for controllable rise and fall times

● +4V to +12.6V single power supply

● 7.6A/1.3A peak sink/source drive current

● 0.23Ωopen-drain pull-down sink output

● 2Ωopen-drain pull-up source output

● 12ns typical propagation delay

● Matching delay time between inverting and non-inverting inputs

● TTL/CMOS logic Inputs

● 0.68V input hysteresis

● Up to +14V logic inputs Regardless of VDD voltage

● Low input capacitance: 2.5pF typical

● -40°C to +125°C operating temperature range

● Pin-to-Pin compatible with MAX5048

Typical Applications

● Boost converters

● Flyback and forward converters

● Secondary synchronous FETs drive in isolated topologies

● Motor control