LM5114BMF/NOPB

TEXAS INSTRUMENTS  LM5114BMF/NOPB  驱动器芯片, MOSFET, 低压侧, 4V-12.6V电源, 7.6A输出, 12ns延迟, SOT-23-6

The is a single 7.6A peak current low-side Gate Driver designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel and also has the features necessary to drive low-side enhancement mode Gallium Nitride GaN FETs. The driver provides inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive in a single device type. The inputs of the driver are TTL/CMOS Logic compatible and withstand the input voltages up to 14V regardless of the VDD voltage. The Driver has split gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently. This gate driver has fast switching speed and minimized propagation delays, facilitating high-frequency operation.

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Independent source and sink outputs for controllable rise and fall times

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0.23R Open-drain pull-down sink output

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2R Open-drain pull-up source output

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Matching delay time between inverting and non-inverting inputs

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TTL/CMOS logic inputs

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0.68V Input hysteresis

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2.5pF Typical low input capacitance

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Pin-to-pin compatible with the MAX5048

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Green product and no Sb/Br

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.