L6392DTR

半桥 IGBT MOSFET 灌:290mA 拉:430mA

半桥 栅极驱动器 IC 非反相 14-SO

得捷:
IC GATE DRVR HALF-BRIDGE 14SO

立创商城:
半桥 IGBT MOSFET 灌:290mA 拉:430mA

艾睿:
Never worry about transistors not switching by using this L6392DTR power driver by STMicroelectronics. This device has a maximum propagation delay time of 200 ns and a maximum power dissipation of 800 mW. Its maximum power dissipation is 800 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device has a minimum operating supply voltage of 12.5 V and a maximum of 20 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C.

安富利:
MOSFET DRVR 600V 0.43A 1-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 14-Pin SOIC T/R

Chip1Stop:
Driver 600V 0.43A 1-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 14-Pin SOIC T/R

Verical:
Driver 600V 0.43A 1-OUT High Side/Low Side Half Brdg Inv/Non-Inv 14-Pin SOIC T/R

儒卓力:
**HaBr MOSvIGBTDr 600V SO-14 SMD **

Win Source:
IC DRIVER HV HI/LOW SIDE SOIC-14