L6391D

L6391 系列 20 V 290 mA 120 Ohm 高压 高边 和 低边 驱动器 -SOIC-14

MOSFET & IGBT 驱动器，STMicroelectronics

### MOSFET & IGBT 驱动器，STMicroelectronics

得捷:
IC GATE DRVR HALF-BRIDGE 14SO

立创商城:
半桥 IGBT MOSFET 灌:290mA 拉:430mA

欧时:
STMicroelectronics L6391D 双 半桥 MOSFET 功率驱动器, 430mA, 12.5 → 20 V电源, 14引脚 SOIC封装

贸泽:
门驱动器 High Voltage BCD N-Ch 600V Low Side

艾睿:
Think of STMicroelectronics&s; L6391D power driver the next time you are in need of a tool that can power your gates on and off. This device has a maximum propagation delay time of 200 ns and a maximum power dissipation of 800 mW. Its maximum power dissipation is 800 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 12.5 V and a maximum of 20 V.

安富利:
MOSFET DRVR 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 14-Pin SOIC Tube

富昌:
L6391 系列 20 V 290 mA 120 Ohm 高压 高边 和 低边 驱动器 -SOIC-14

Chip1Stop:
Driver 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 14-Pin SOIC Tube

Verical:
Driver 2-OUT High and Low Side Half Brdg Inv/Non-Inv 14-Pin SOIC Tube