TEXAS INSTRUMENTS LM5105SD/NOPB 芯片, MOSFET驱动器, 半桥, LLP-10
MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments
得捷:
IC GATE DRVR HALF-BRIDGE 10WSON
立创商城:
半桥 MOSFET 灌:1.8A 拉:1.8A
德州仪器TI:
1.8-A, 1.6-A 100-V half bridge gate driver with 8-V UVLO and programmable dead-time
欧时:
MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments### MOSFET & IGBT 驱动器,Texas Instruments
e络盟:
MOSFET DRIVER, HALF BRIDGE, LLP-10
艾睿:
The LM5105SD/NOPB power driver from Texas Instruments can provide management of your transistors and switches. This device has a maximum propagation delay time of 595typ ns. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device has a minimum operating supply voltage of 8 V and a maximum of 14 V. This gate driver has an operating temperature range of -40 °C to 125 °C.
安富利:
MOSFET DRVR 100V 1.8A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 10-Pin LLP EP T/R
Chip1Stop:
Driver 100V 1.8A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 10-Pin WSON EP T/R
Verical:
Driver 100V 1.8A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 10-Pin WSON EP T/R
Newark:
Dual MOSFET Driver, Half Bridge, 8V-14V Supply, 1.8A Out, 26ns Delay, Llp-10
Win Source:
IC DVR GATE HALF BRIDGE 10WSON
电源电压DC 8.00V min
上升/下降时间 15 ns
输出接口数 2
输出电压 118 V
针脚数 10
静态电流 400 µA
上升时间 15 ns
下降时间 15 ns
下降时间Max 15 ns
上升时间Max 15 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
电源电压 8V ~ 14V
电源电压Max 14 V
电源电压Min 8 V
安装方式 Surface Mount
引脚数 10
封装 WDFN-10
长度 4 mm
宽度 4 mm
高度 0.8 mm
封装 WDFN-10
工作温度 -40℃ ~ 125℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2018/01/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
LM5105SD/NOPB TI 德州仪器 | 当前型号 | 当前型号 |
LM5105SDX/NOPB 德州仪器 | 完全替代 | LM5105SD/NOPB和LM5105SDX/NOPB的区别 |
LM5105SDX 德州仪器 | 完全替代 | LM5105SD/NOPB和LM5105SDX的区别 |
LM5105SD 德州仪器 | 类似代替 | LM5105SD/NOPB和LM5105SD的区别 |