TEXAS INSTRUMENTS LM5111-1M 双路驱动器, MOSFET, 低压侧, 3.5V-14V电源, 5A输出, 25ns延迟, SOIC-8
The is a dual 5A compound Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability.
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
电源电压DC 14.0V max
上升/下降时间 14ns, 12ns
输出接口数 2
输出电流 5 A
针脚数 8
静态电流 1.00 mA
上升时间 25 ns
下降时间 25 ns
下降时间Max 25 ns
上升时间Max 25 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
电源电压 3.5V ~ 14V
电源电压Max 14 V
电源电压Min 3.5 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.9 mm
高度 1.45 mm
封装 SOIC-8
工作温度 -40℃ ~ 125℃ TJ
产品生命周期 Active
包装方式 Each
制造应用 电机驱动与控制, 电源管理
RoHS标准 Non-Compliant
含铅标准 Contains Lead
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
LM5111-1M TI 德州仪器 | 当前型号 | 当前型号 |
LM5111-1MX 德州仪器 | 完全替代 | LM5111-1M和LM5111-1MX的区别 |
LM5111-1MX/NOPB 德州仪器 | 完全替代 | LM5111-1M和LM5111-1MX/NOPB的区别 |
LM5111-1M/NOPB 德州仪器 | 类似代替 | LM5111-1M和LM5111-1M/NOPB的区别 |