L6391DTR

L6391 系列 双通道 290 mA 120 Ohm 高压 高压侧和低压侧 驱动器 - SOIC-14

The L6391 is a high voltage device manufactured with the BCD™ “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.

The high-side floating section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing the microcontroller/DSP.

An integrated comparator is available for protections against overcurrent, overtemperature, etc.

**Key Features**

.

High voltage rail up to 600 V

.

dV/dt immunity ± 50 V/nsec in full temperature range

.

Driver current capability:

.

290 mA source

.

430 mA sink

.

Switching times 75/35 nsec rise/fall with 1 nF load

.

3.3 V, 5 V TTL/CMOS inputs with hysteresis

.

Integrated bootstrap diode

.

Comparator for fault protections

.

Smart shutdown function

.

Adjustable deadtime

.

Interlocking function

.

Compact and simplified layout

.

Bill of material reduction

.

Effective fault protection

.

Flexible, easy and fast design