门驱动器 High-Speed 4.5A Synchronous MOSFET Driver 8-WSON -40 to 125
半桥 栅极驱动器 IC 非反相 8-WSON(4x4)
得捷:
IC GATE DRVR HALF-BRIDGE 8WSON
立创商城:
半桥 MOSFET 灌:3A 拉:4.5A
德州仪器TI:
4.5-A, 30-V half bridge gate driver for synchronous/asynchronous drive
贸泽:
门驱动器 High-Speed 4.5A Synchronous MOSFET Driver 8-WSON -40 to 125
艾睿:
Working with high voltage decision making circuits? This LM27222SD/NOPB power driver by Texas Instruments will properly help switch states. This device has a maximum propagation delay time of 8 ns and a maximum power dissipation of 720 mW. Its maximum power dissipation is 720 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C. This device has a minimum operating supply voltage of 4 V and a maximum of 6.85 V.
安富利:
MOSFET DRVR 4.5A 2-OUT Hi/Lo Side Inv/Non-Inv 8-Pin LLP EP T/R
Chip1Stop:
MOSFET DRVR 4.5A 2-OUT Hi/Lo Side Inv/Non-Inv 8-Pin LLP EP T/R
Verical:
Driver 4.5A 2-OUT High and Low Side Inv/Non-Inv 8-Pin WSON EP T/R
上升/下降时间 17ns, 12ns
输出接口数 2
输出电流 4.5 A
耗散功率 720 mW
静态电流 540 µA
上升时间 17 ns
下降时间 14 ns
下降时间Max 14 ns
上升时间Max 17 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 720 mW
电源电压 4V ~ 6.85V
安装方式 Surface Mount
引脚数 8
封装 WDFN-8
长度 4 mm
宽度 4 mm
高度 0.8 mm
封装 WDFN-8
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
LM27222SD/NOPB TI 德州仪器 | 当前型号 | 当前型号 |
LM27222SD 德州仪器 | 完全替代 | LM27222SD/NOPB和LM27222SD的区别 |
LM27222SDX 德州仪器 | 完全替代 | LM27222SD/NOPB和LM27222SDX的区别 |