TEXAS INSTRUMENTS LM5101ASD/NOPB 驱动器, MOSFET, 高压侧和低压侧, 9V-14V电源, 3A输出, WSON-10
MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments
### MOSFET & IGBT 驱动器,Texas Instruments
得捷:
IC GATE DRVR HALF-BRIDGE 10WSON
立创商城:
半桥 MOSFET 灌:3A 拉:3A
德州仪器TI:
3-A, 100-V half bridge gate driver with 8-V UVLO and TTL inputs
欧时:
Texas Instruments LM5101ASD/NOPB 双 半桥 MOSFET 功率驱动器, 3A, 9 → 14 V电源, 10引脚 LLP封装
e络盟:
驱动器, MOSFET, 高压侧和低压侧, 9V-14V电源, 3A输出, WSON-10
艾睿:
Efficiency is important when designing any electronic circuit. The LM5101ASD/NOPB power driver from Texas Instruments ensures that proper power management is enforced. This device has a maximum propagation delay time of 26typ ns. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C. This device has a minimum operating supply voltage of 9 V and a maximum of 14 V.
安富利:
MOSFET DRVR 3A 2-OUT Hi/Lo Side Half Brdg Non-Inv 10-Pin LLP EP T/R
Chip1Stop:
MOSFET DRVR 3A 2-OUT Hi/Lo Side Half Brdg Non-Inv 10-Pin WSON EP T/R
Verical:
Driver 3A 2-OUT High and Low Side Half Brdg Non-Inv 10-Pin WSON EP T/R
Newark:
# TEXAS INSTRUMENTS LM5101ASD/NOPB MOSFET DRIVER, HIGH/LOW-SIDE, WSON-10
Win Source:
IC DVR HALF-BRIDGE HV 10WSON
电源电压DC 14.0V max
上升/下降时间 430ns, 260ns
输出接口数 2
通道数 2
针脚数 10
静态电流 200 µA
上升时间 430 ns
下降时间 260 ns
下降时间Max 260 ns
上升时间Max 430 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
电源电压 9V ~ 14V
电源电压Max 14 V
电源电压Min 9 V
安装方式 Surface Mount
引脚数 10
封装 WDFN-10
长度 4 mm
宽度 4 mm
高度 0.8 mm
封装 WDFN-10
工作温度 -40℃ ~ 125℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
LM5101ASD/NOPB TI 德州仪器 | 当前型号 | 当前型号 |
LM5101ASDX/NOPB 德州仪器 | 完全替代 | LM5101ASD/NOPB和LM5101ASDX/NOPB的区别 |
LM5101ASD 德州仪器 | 完全替代 | LM5101ASD/NOPB和LM5101ASD的区别 |