MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments### MOSFET & IGBT 驱动器,Texas Instruments
MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments
### MOSFET & IGBT 驱动器,Texas Instruments
得捷:
IC GATE DRVR HALF-BRIDGE 10WSON
立创商城:
半桥 MOSFET 灌:1A 拉:1A
德州仪器TI:
1-A, 100-V half bridge gate driver with 8-V UVLO and TTL Imputs
欧时:
Texas Instruments LM5101CSD/NOPB 双 半桥 MOSFET 功率驱动器, 1A, 9 → 14 V电源, 10引脚 LLP封装
贸泽:
门驱动器 1A High Voltage High-Side and Low-Side Gate Driver 10-WSON -40 to 125
艾睿:
Drive a high voltage and high current line with a transistor a certain way with this LM5101CSD/NOPB power driver manufactured by Texas Instruments. This device has a maximum propagation delay time of 26typ ns. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device has a minimum operating supply voltage of 9 V and a maximum of 14 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C.
安富利:
MOSFET DRVR 1A 2-OUT Hi/Lo Side Half Brdg Non-Inv 10-Pin LLP EP T/R
Chip1Stop:
Driver 1A 2-OUT Hi/Lo Side Half Brdg Non-Inv 10-Pin WSON EP T/R
Verical:
Driver 1A 2-OUT Hi/Lo Side Half Brdg Non-Inv 10-Pin WSON EP T/R
电源电压DC 14.0V max
上升/下降时间 990ns, 715ns
输出接口数 2
输出电流 1 A
静态电流 200 µA
上升时间 990 ns
下降时间 715 ns
下降时间Max 715 ns
上升时间Max 990 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
电源电压 9V ~ 14V
安装方式 Surface Mount
引脚数 10
封装 WDFN-10
长度 4 mm
宽度 4 mm
高度 0.8 mm
封装 WDFN-10
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
LM5101CSD/NOPB TI 德州仪器 | 当前型号 | 当前型号 |
LM5101CSD 德州仪器 | 完全替代 | LM5101CSD/NOPB和LM5101CSD的区别 |
LM5101CSDX 德州仪器 | 完全替代 | LM5101CSD/NOPB和LM5101CSDX的区别 |
LM5101CSDX/NOPB 德州仪器 | 完全替代 | LM5101CSD/NOPB和LM5101CSDX/NOPB的区别 |