MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments### MOSFET & IGBT 驱动器,Texas Instruments
MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments
### MOSFET & IGBT 驱动器,Texas Instruments
得捷:
IC GATE DRVR HALF-BRIDGE 10WSON
立创商城:
半桥 MOSFET 灌:1.6A 拉:1.6A
德州仪器TI:
2-A, 100-V half bridge gate driver with 8-V UVLO and adaptive delay
欧时:
Texas Instruments LM5104SD/NOPB 双 半桥 MOSFET 功率驱动器, 1.8A, 9 → 14 V电源, 10引脚 SON封装
艾睿:
Working with high voltage decision making circuits? This LM5104SD/NOPB power driver by Texas Instruments will properly help switch states. This device has a maximum propagation delay time of 56 ns. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C. This device has a minimum operating supply voltage of 9 V and a maximum of 14 V.
安富利:
MOSFET DRVR 1.8A 2-OUT Hi/Lo Side Full Brdg/Half Brdg Inv/Non-Inv 10-Pin LLP EP T/R
Chip1Stop:
MOSFET DRVR 1.8A 2-OUT Hi/Lo Side Full Brdg/Half Brdg Inv/Non-Inv 10-Pin WSON EP T/R
Verical:
Driver 1.8A 2-OUT High and Low Side Full Brdg/Half Brdg Inv/Non-Inv 10-Pin WSON EP T/R
Newark:
# TEXAS INSTRUMENTS LM5104SD/NOPB MOSFET Driver, 2 outputs, Half Bridge, 9V-14V supply, 2A output, LLP-10
电源电压DC 9.00V min
上升/下降时间 600 ns
输出接口数 2
输出电压 350 mV
输出电流 1.80 A
静态电流 400 µA
上升时间 600 ns
下降时间 600 ns
下降时间Max 600 ns
上升时间Max 600 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
电源电压 9V ~ 14V
电源电压Max 14 V
电源电压Min 9 V
安装方式 Surface Mount
引脚数 10
封装 WDFN-10
长度 4 mm
宽度 4 mm
高度 0.8 mm
封装 WDFN-10
工作温度 -40℃ ~ 125℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
LM5104SD/NOPB TI 德州仪器 | 当前型号 | 当前型号 |
LM5104SDX 德州仪器 | 类似代替 | LM5104SD/NOPB和LM5104SDX的区别 |
LM5104SD 德州仪器 | 类似代替 | LM5104SD/NOPB和LM5104SD的区别 |
LM5104SDX/NOPB 德州仪器 | 功能相似 | LM5104SD/NOPB和LM5104SDX/NOPB的区别 |