












MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments### MOSFET & IGBT 驱动器,Texas Instruments
MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments
### MOSFET & IGBT 驱动器,Texas Instruments
得捷:
IC GATE DRVR HALF-BRIDGE 8SOIC
立创商城:
LM25101AM/NOPB
德州仪器TI:
3-A, 2-A or 1-A half bridge gate driver with 8-V UVLO and TTL inputs
欧时:
### MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments### MOSFET & IGBT 驱动器,Texas Instruments
贸泽:
Gate Drivers MOSFET DRVRS OTHER ICs
艾睿:
Switch on or off your high-power transistors with this LM25101AM/NOPB power driver from Texas Instruments. This device has a maximum propagation delay time of 26typ ns. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 9 V and a maximum of 14 V.
安富利:
MOSFET DRVR 3A 2-OUT Hi/Lo Side Non-Inv 8-Pin SOIC T/R
Chip1Stop:
Driver 3A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC Tube
Verical:
Driver 3A 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin SOIC Tube
上升/下降时间 430ns, 260ns
输出接口数 2
输出电流 3 A
上升时间 8 ns
下降时间 8 ns
下降时间Max 260 ns
上升时间Max 430 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
电源电压 9V ~ 14V
电源电压Max 18 V
电源电压Min 9 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -40℃ ~ 125℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
LM25101AM/NOPB TI 德州仪器 | 当前型号 | 当前型号 |
LM25101AMX/NOPB 德州仪器 | 完全替代 | LM25101AM/NOPB和LM25101AMX/NOPB的区别 |