LTC4446EMS8E#PBF

LINEAR TECHNOLOGY  LTC4446EMS8E#PBF  驱动器, MOSFET, 高压侧和低压侧, 7.2V-13.5V电源, 2.5A输出, 22ns延迟, MSOP-8

The is a high voltage high side/low side MOSFET Driver that drives two N-channel MOSFETs in a DC/DC converter with supply voltages up to 100V. The powerful driver capability reduces switching losses in MOSFETs with high gate capacitance. The LTC4446"s pull-up for the top gate driver has a peak output current of 2.5A and its pull-down has an output impedance of 1.2R. The pull-up for the bottom gate driver has a peak output current of 3A and the pull-down has an output impedance of 0.55R. The LTC4446 is configured for two supply-independent inputs. The high side input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 114V above ground. The LTC4446 contains under-voltage lockout circuits that disable the external MOSFETs when activated. It does not have adaptive shoot-through protection.

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Bootstrap supply voltage up to 114V

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2.5A Peak top gate pull-up current

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3A Peak bottom gate pull-up current

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1.2R Top gate driver pull-down

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0.55R Bottom gate driver pull-down

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5ns Top gate fall time driving 1nF load

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8ns Top gate rise time driving 1nF load

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3ns Bottom gate fall time driving 1nF load

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6ns Bottom gate rise time driving 1nF load

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Drives both high and low side N-channel MOSFETs

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Under-voltage lockout