MOSFET & IGBT 驱动器,Texas Instruments
MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments
### MOSFET & IGBT 驱动器,Texas Instruments
得捷:
LM5101B 2A HIGH VOLTAGE HIGH-SID
立创商城:
LM5101BMA/NOPB
德州仪器TI:
2-A, 100-V half bridge gate driver with 8-V UVLO and TTL inputs
欧时:
### MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments### MOSFET & IGBT 驱动器,Texas Instruments
艾睿:
Transistors are never going away, implement this LM5101BMA/NOPB power driver by Texas Instruments in order to help turn on and off the transistor. This device has a maximum propagation delay time of 26typ ns. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 9 V and a maximum of 14 V.
安富利:
MOSFET DRVR 2A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC N Rail
Chip1Stop:
MOSFET DRVR 2A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC Rail
Verical:
Driver 2A 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin SOIC Tube
Newark:
# TEXAS INSTRUMENTS LM5101BMA/NOPB MOSFET Driver High Side and Low Side, 9V-14V supply, 2A peak out, SOIC-8
电源电压DC 14.0V max
上升/下降时间 570ns, 430ns
输出接口数 2
静态电流 200 µA
上升时间 570 ns
下降时间 430 ns
下降时间Max 430 ns
上升时间Max 570 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
电源电压 9V ~ 14V
电源电压Max 14 V
电源电压Min 9 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.9 mm
高度 1.45 mm
封装 SOIC-8
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
LM5101BMA/NOPB TI 德州仪器 | 当前型号 | 当前型号 |
LM5101BMAX/NOPB 德州仪器 | 完全替代 | LM5101BMA/NOPB和LM5101BMAX/NOPB的区别 |
LM25101BMAX/NOPB 德州仪器 | 完全替代 | LM5101BMA/NOPB和LM25101BMAX/NOPB的区别 |
LM5101BMAX 德州仪器 | 完全替代 | LM5101BMA/NOPB和LM5101BMAX的区别 |