LM5113 5A , 100V半桥栅极驱动器的增强型GaN FET的 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs
The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride GaN FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently.
In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turn-on during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.
型号/品牌 | 代替类型 | 替代型号对比 |
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LM5113SDX/NOPB TI 德州仪器 | 当前型号 | 当前型号 |
LM5113SD/NOPB 德州仪器 | 完全替代 | LM5113SDX/NOPB和LM5113SD/NOPB的区别 |
LM5113SDE/NOPB 德州仪器 | 完全替代 | LM5113SDX/NOPB和LM5113SDE/NOPB的区别 |
LM5113TME/NOPB 德州仪器 | 类似代替 | LM5113SDX/NOPB和LM5113TME/NOPB的区别 |