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MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments
得捷:
IC GATE DRVR HALF-BRIDGE 10WSON
立创商城:
半桥 MOSFET 灌:1.2A 拉:5A
欧时:
### MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments### MOSFET & IGBT 驱动器,Texas Instruments
e络盟:
驱动器, MOSFET, 半桥, 4.5V-5.5V电源, 5A输出, WSON-10
艾睿:
The LM5113SDE/NOPB power driver from Texas Instruments can provide management of your transistors and switches. Its typical operating supply voltage is 5 V. This device has a maximum propagation delay time of 30typ ns. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device has a typical operating supply voltage of 5 V. Its minimum operating supply voltage of 4.5 V, while its maximum is 5.5 V. This gate driver has an operating temperature range of -40 °C to 125 °C.
安富利:
MOSFET DRVR 5A 2-OUT Hi/Lo Side Half Brdg Non-Inv 10-Pin LLP EP T/R
Chip1Stop:
Driver 5A 2-OUT Hi/Lo Side Half Brdg Non-Inv 10-Pin WSON EP T/R
Verical:
Driver 5A 2-OUT High and Low Side Half Brdg Non-Inv 10-Pin WSON EP T/R
Newark:
# TEXAS INSTRUMENTS LM5113SDE/NOPB MOSFET DRIVER, HALF-BRIDGE, WSON-10
电源电压DC 4.50V min
上升/下降时间 7ns, 1.5ns
输出接口数 2
针脚数 10
上升时间 4 ns
下降时间 4 ns
下降时间Max 4 ns
上升时间Max 4 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
电源电压 4.5V ~ 5.5V
电源电压Max 5.5 V
电源电压Min 4.5 V
安装方式 Surface Mount
引脚数 10
封装 WDFN-10
长度 4 mm
宽度 4 mm
高度 0.8 mm
封装 WDFN-10
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 信号处理, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
ECCN代码 EAR99



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
LM5113SDE/NOPB TI 德州仪器 | 当前型号 | 当前型号 |
LM5113SD/NOPB 德州仪器 | 完全替代 | LM5113SDE/NOPB和LM5113SD/NOPB的区别 |
LM5113SDX/NOPB 德州仪器 | 完全替代 | LM5113SDE/NOPB和LM5113SDX/NOPB的区别 |
LM5113TMX/NOPB 德州仪器 | 类似代替 | LM5113SDE/NOPB和LM5113TMX/NOPB的区别 |