LCMXO2-1200ZE-1TG144I

LATTICE SEMICONDUCTOR  LCMXO2-1200ZE-1TG144I  可编程逻辑芯片, PLD, 1280查找表, MACHXO2, 144TQFP

Features

Flexible Logic Architecture

 • Six devices with 256 to 6864 LUT4s and  19 to 335 I/Os

Ultra Low Power Devices

  • Advanced 65 nm low power process

  • As low as 19 µW standby power

  • Programmable low swing differential I/Os

  • Stand-by mode and other power saving options

Embedded and Distributed Memory

  • Up to 240 Kbits sysMEM™ Embedded Block RAM

  • Up to 54 Kbits Distributed RAM

  • Dedicated FIFO control logic  On-Chip User Flash Memory

  • Up to 256 Kbits of User Flash Memory

  • 100,000 write cycles

  • Accessible through WISHBONE, SPI, I2C and JTAG interfaces

  • Can be used as soft processor PROM or as Flash memory

Pre-Engineered Source Synchronous I/O

  • DDR registers in I/O cells

  • Dedicated gearing logic

  • 7:1 Gearing for Display I/Os

  • Generic DDR, DDRX2, DDRX4

  • Dedicated DDR/DDR2/LPDDR memory with DQS support

High Performance, Flexible I/O Buffer

  • Programmable sysIO™ buffer supports wide range of interfaces:

   – LVCMOS 3.3/2.5/1.8/1.5/1.2

   – LVTTL

   –PCI

   – LVDS, Bus-LVDS, MLVDS, RSDS, LVPECL

   – SSTL 25/18

   – HSTL 18

   – Schmitt trigger inputs, up to 0.5V hysteresis

  • I/Os support hot socketing

  • On-chip differential termination

  • Programmable pull-up or pull-down mode