L6388 系列 双通道 400 mA 125 Ω 高压 高压侧和低压侧 驱动器 - SOIC-8
MOSFET & IGBT 驱动器,STMicroelectronics
立创商城:
半桥 IGBT MOSFET 灌:400mA 拉:650mA
得捷:
IC GATE DRVR HALF-BRIDGE 8SO
欧时:
MOSFET & IGBT 驱动器,STMicroelectronics### MOSFET & IGBT 驱动器,STMicroelectronics
艾睿:
Use this L6388ED013TR power driver from STMicroelectronics to power your transistors. This device has a maximum propagation delay time of 300 ns and a maximum power dissipation of 750 mW. Its maximum power dissipation is 750 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This gate driver has a minimum operating temperature of -45 °C and a maximum of 125 °C. This device has a maximum of 17 V.
安富利:
MOSFET DRVR 600V 0.65A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SO N T/R
Chip1Stop:
Driver 600V 0.65A 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin SO N T/R
TME:
Driver; 400mA; 580V; 750mW; Channels:2; 400kHz; SO8; Usup:17V
Verical:
Driver 600V 0.65A 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin SO N T/R
儒卓力:
**HaBr MOSvIGBTDr 600V SO-8 SMD **
力源芯城:
高压高低边驱动器
Win Source:
IC DRIVER HI/LO SIDE HV 8-SOIC
频率 0.4 MHz
额定功率 0.75 W
上升/下降时间 70ns, 40ns
输出接口数 2
输出电流 650 mA
供电电流 0.45 mA
针脚数 8
漏源极电阻 125 Ω
耗散功率 0.75 W
静态电流 450 µA
上升时间 100 ns
输出电流Max 0.65 A
下降时间 80 ns
下降时间Max 80 ns
上升时间Max 100 ns
工作温度Max 125 ℃
工作温度Min -45 ℃
耗散功率Max 750 mW
电源电压 17 V
电源电压Max 17 V
电源电压Min 0.3 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -40℃ ~ 125℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
L6388ED013TR ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
L6388 意法半导体 | 完全替代 | L6388ED013TR和L6388的区别 |
L6388D 意法半导体 | 完全替代 | L6388ED013TR和L6388D的区别 |
L6388ED 意法半导体 | 类似代替 | L6388ED013TR和L6388ED的区别 |