L6385 系列 单 400 mA 125 Ω 高压 高压侧和低压侧 驱动器 - SOIC-8
半桥 栅极驱动器 IC 反相 8-SO
立创商城:
L6385ED013TR
得捷:
IC GATE DRVR HALF-BRIDGE 8SO
艾睿:
Ideal for high voltage transistors this L6385ED013TR power driver manufactured by STMicroelectronics will help switch junction. This device has a maximum propagation delay time of 110typ ns and a maximum power dissipation of 750 mW. Its maximum power dissipation is 750 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device has a maximum of 17 V. This gate driver has an operating temperature range of -45 °C to 125 °C.
安富利:
MOSFET DRVR 600V 0.65A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SO N T/R
富昌:
L6385 Series Single 400 mA 125 Ω High Voltage High and Low Side Driver - SOIC-8
Chip1Stop:
Driver 600V 0.65A 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin SO N T/R
TME:
Driver; 400mA; 580V; 750mW; Channels:2; 400kHz; SO8; Usup:17V
Verical:
Driver 600V 0.65A 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin SO N T/R
儒卓力:
**HaBr MOSvIGBTDr 600V SO-8 SMD **
DeviceMart:
Driver 600V 0.65A 2-OUT Hi/Lo Side Half Brdg Non-Inv, SOIC-8
Win Source:
IC DRIVER HI/LO SIDE HV 8-SOIC
频率 400 kHz
额定功率 750 mW
上升/下降时间 50ns, 30ns
输出接口数 2
输出电压 580 V
输出电流 400 mA
通道数 2
针脚数 8
耗散功率 0.75 W
上升时间 50 ns
输出电流Max 0.65 A
下降时间 30 ns
下降时间Max 30 ns
上升时间Max 50 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 750 mW
电源电压 17 V
电源电压Max 17 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
香港进出口证 NLR
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
L6385ED013TR ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
L6385ED 意法半导体 | 类似代替 | L6385ED013TR和L6385ED的区别 |
L6385E 意法半导体 | 类似代替 | L6385ED013TR和L6385E的区别 |
L6385D013TR 意法半导体 | 类似代替 | L6385ED013TR和L6385D013TR的区别 |