L6384ED013TR

L6384 系列 双通道 400 mA 125Ω 高压 半桥 驱动器 - SOIC-8

MOSFET & IGBT 驱动器，STMicroelectronics

### MOSFET & IGBT 驱动器，STMicroelectronics

欧时:
STMicroelectronics 电机控制器 L6384ED013TR, 0.4A, 400kHz, 14.6 → 16.6 V

得捷:
IC GATE DRVR HALF-BRIDGE 8SO

立创商城:
半桥 IGBT MOSFET 灌:400mA 拉:650mA

e络盟:
MOSFET驱动器, 半桥, 11.5 V至16.6 V电源, 650 mA输出, 250 ns延迟, SOIC-8

艾睿:
Transistors are a crucial component but for high powered designs this L6384ED013TR power driver by STMicroelectronics is a crucial component. This device has a maximum propagation delay time of 300 ns and a maximum power dissipation of 750 mW. Its maximum power dissipation is 750 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device has a maximum of 16.6 V. This gate driver has a minimum operating temperature of -45 °C and a maximum of 125 °C.

安富利:
MOSFET DRVR 600V 0.65A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin SO N T/R

富昌:
SO 08 .15 JEDEC

Chip1Stop:
Driver 600V 0.65A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SO N T/R

TME:
Driver; 400mA; 580V; 750mW; Channels:2; 400kHz; SO8

Verical:
Driver 600V 0.65A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SO N T/R

儒卓力:
**HaBr MOSvIGBTDr 600V SO-8 SMD **

Win Source:
IC DRIVER HALF BRIDGE HV 8SOIC