LM5104

具有自适应延迟的高电压半桥接闸极驱动器

The High-Voltage Gate Driver is designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. This device is available in the standard SOIC and the WSON packages.

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Drives Both a High-Side and Low-Side N-Channel MOSFET

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Adaptive Rising and Falling Edges With Programmable

Additional Delay

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Single Input Control

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Bootstrap Supply Voltage Range up to 118-V DC

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Fast Turnoff Propagation Delay 25 ns Typical

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Drives 1000-pF Loads With 15-ns Rise and Fall Times

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Supply Rail Undervoltage Lockout

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SOIC and WSON-10 4-mm × 4-mm Package