LDTC143EM3T5G

LDTC143EM3T5G概述

数字晶体管 LDTC143EM3T5G SOT-723 NPN Vceo=50V Ic=100mA HEF=15-30

NPN Silicon Surface Mount Transistors With Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-723 package which is designed for low power surface mount applications.

Simplifies Circuit Design

Reduces Component Count

The SOT-723 Package can be Soldered using Wave or Reflow.

Available in 4 mm, 8000 Unit Tape & Reel

These are Pb-Free Devices.

Reduces Board Space

LDTC143EM3T5G中文资料参数规格
技术参数

极性 NPN

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 15

封装参数

封装 SOT-723

外形尺寸

封装 SOT-723

其他

最小包装 8000

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买LDTC143EM3T5G
型号: LDTC143EM3T5G
制造商: Leshan Radio 乐山无线电
描述:数字晶体管 LDTC143EM3T5G SOT-723 NPN Vceo=50V Ic=100mA HEF=15-30

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