ON SEMICONDUCTOR MJD112T4G. 达林顿晶体管, NPN, 100V, D-PAK
NPN 复合,On Semiconductor
### 标准
带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。
欧时:
### NPN 复合晶体管,On Semiconductor### 标准带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。### 双极性晶体管,On SemiconductorON Semiconductor 的各种双极晶体管,包括以下类别:小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
立创商城:
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
得捷:
TRANS NPN DARL 100V 2A DPAK
贸泽:
达林顿晶体管 2A 100V Bipolar Power NPN
e络盟:
ON SEMICONDUCTOR MJD112T4G. 达林顿晶体管, NPN, 100V, D-PAK
艾睿:
Amplify your current using ON Semiconductor&s;s NPN MJD112T4G Darlington transistor in order to yield a higher current gain. This Darlington transistor array&s;s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@40mA@4A V. This product&s;s maximum continuous DC collector current is 2 A, while its minimum DC current gain is 500@0.5A@3 V|1000@2A@3V|200@4A@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. Its maximum power dissipation is 1750 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
Allied Electronics:
ON Semi MJD112T4G NPN Darlington Transistor; 4 A 100 V HFE:200; 3-Pin DPAK
安富利:
Trans Darlington NPN 100V 2A 3-Pin2+Tab DPAK T/R
Chip1Stop:
Trans Darlington NPN 100V 2A 3-Pin2+Tab DPAK T/R
Verical:
Trans Darlington NPN 100V 2A 1750mW 3-Pin2+Tab DPAK T/R
Newark:
# ON SEMICONDUCTOR MJD112T4G Bipolar BJT Single Transistor, Darlington, NPN, 100 V, 25 MHz, 20 W, 2 A, 1000 hFE
DeviceMart:
TRANS DARL NPN 2A 100V DPAK
Win Source:
TRANS NPN DARL 100V 2A DPAK
额定电压DC 100 V
额定电流 2.00 A
无卤素状态 Halogen Free
针脚数 3
极性 NPN
耗散功率 20 W
击穿电压集电极-发射极 100 V
集电极最大允许电流 2A
最小电流放大倍数hFE 1000 @2A, 3V
最大电流放大倍数hFE 12000
额定功率Max 1.75 W
直流电流增益hFE 12
工作温度Max 150 ℃
工作温度Min -65 ℃
增益带宽 25MHz Min
耗散功率Max 1750 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.38 mm
封装 TO-252-3
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Signal Processing, 工业, 车用, Industrial, 电源管理, Power Management, Automotive, 信号处理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
香港进出口证 NLR
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MJD112T4G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MJD112G 安森美 | 类似代替 | MJD112T4G和MJD112G的区别 |
MJD112RLG 安森美 | 类似代替 | MJD112T4G和MJD112RLG的区别 |
MJD112TF 安森美 | 类似代替 | MJD112T4G和MJD112TF的区别 |