MJE802G

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MJE802G概述

ON SEMICONDUCTOR  MJE802G.  双极晶体管

The is a 4A NPN bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications.

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Complementary device
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Monolithic construction with built-in base-emitter resistors to limit leakage multiplication

得捷:
TRANS NPN DARL 80V 4A TO126


欧时:
BIP C77 NPN 4A 80V FG


立创商城:
MJE802G


e络盟:
双极晶体管


艾睿:
Trans Darlington NPN 80V 4A 40000mW 3-Pin3+Tab TO-225 Box


Allied Electronics:
Transistor; Darlington; Si; NPN; Power; Switch; Vo 80VDC; VI 5VDC; Io 4ADC; PD 40W


Chip1Stop:
Trans Darlington NPN 80V 4A 3-Pin3+Tab TO-225 Bulk


TME:
Transistor: NPN; bipolar; Darlington; 80V; 4A; 40W; TO225


Verical:
Trans Darlington NPN 80V 4A 40000mW 3-Pin3+Tab TO-225 Box


Newark:
# ON SEMICONDUCTOR  MJE802G  Bipolar BJT Single Transistor, Darlington, NPN, 80 V, 40 W, 4 A, 750 hFE


Win Source:
TRANS NPN DARL 80V 4A TO225AA


MJE802G中文资料参数规格
技术参数

额定电压DC 80.0 V

额定电流 4.00 A

无卤素状态 Halogen Free

输出电压 80 V

输出电流 4 A

针脚数 3

极性 NPN

耗散功率 40 W

击穿电压集电极-发射极 80 V

集电极最大允许电流 4A

最小电流放大倍数hFE 750 @1.5A, 3V

额定功率Max 40 W

直流电流增益hFE 100

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 40000 mW

输入电压 5 V

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-225-3

外形尺寸

长度 7.8 mm

宽度 2.66 mm

封装 TO-225-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Bulk

制造应用 Power Management, 电源管理, 工业, Industrial

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

数据手册

在线购买MJE802G
型号: MJE802G
描述:ON SEMICONDUCTOR  MJE802G.  双极晶体管
替代型号MJE802G
型号/品牌 代替类型 替代型号对比

MJE802G

ON Semiconductor 安森美

当前型号

当前型号

BD679G

安森美

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MJE802G和BD679G的区别

MJE802

安森美

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MJE802G和MJE802的区别

BD679A

意法半导体

功能相似

MJE802G和BD679A的区别

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