MUN5214DW1T1G

ON SEMICONDUCTOR  MUN5214DW1T1G  晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率, SOT-363

双电阻器双数字，

得捷:
TRANS 2NPN PREBIAS 0.25W SOT363

立创商城:
Dual NPN Bipolar Digital Transistor BRT

欧时:
ON Semiconductor MUN5214DW1T1G 双 NPN 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:0.21, 6引脚

贸泽:
Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V

e络盟:
ON SEMICONDUCTOR  MUN5214DW1T1G.  预偏置数字式晶体管, 50V VBRCEO, 100mA IC, SOT-363

艾睿:
Thanks to ON Semiconductor&s;s NPN MUN5214DW1T1G digital transistor, you can easily benefit from the characteristics of traditional BJT s while working with digital systems. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.

安富利:
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R

Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SC-88 T/R

Verical:
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SC-88 T/R

Newark:
# ON SEMICONDUCTOR  MUN5214DW1T1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 Ratio, SOT-363

Win Source:
TRANS 2NPN PREBIAS 0.25W SOT363