MA4SW210B-1

HMIC ？硅PIN二极管开关，带有偏置网络 HMIC? Silicon PIN Diode Switches with Integrated Bias Network

Description

The and MA4SW310B-1 devices are SP2T and SP3T broad band switches with integrated bias

networks utilizing M/A-COM"s HMICTM Heterolithic Microwave Integrated Circuit Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or viasby imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon

and  glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low

millimeter frequencies.

Features

· Broad Bandwith Specified up to 18 GHz

· Usable up to 26 GHz

· Integrated Bias Network

· Low Insertion Loss / High Isolation

· Rugged, Fully Monolithic, Glass Encapsulated Construction