MA4SW310B-1

单片PIN二极管开关，带有偏置网络 Monolithic Pin Diode Switches with Integrated Bias Network

Description

The MA4SW210B-1 and devices are SP2T and SP3T broad band switches with integrated bias networks utilizing M/A-COM"s HMICTM  Heterolithic  Microwave  Integrated Circuit Process, US Patent 5,268,310. This process allows the incorporation  of  silicon pedestals that form series and shunt diodes or

vias  by  imbedding  them  in  low  loss,  low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies.

Features

♦  Broad Bandwidth Specified 2 to 18 GHz

♦  Usable up to 26 GHz

♦  Integrated Bias Network

♦  Low Insertion Loss / High Isolation

♦  Rugged,

♦  Fully Monolithic

♦  Glass Encapsulate Construction

♦  Polymer Protective Coating