ON SEMICONDUCTOR MCR12NG 晶闸管, 800 V, 20 mA, 7.8 A, 12 A, TO-220AB, 3 引脚 新
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave silicon gate−controlled devices are needed.
Features
•Blocking Voltage to 800 Volts
•On−State Current Rating of 12 Amperes RMS at 80°C
•High Surge Current Capability −100 Amperes
•Rugged, Economical TO−220AB Package
•Glass Passivated Junctions for Reliability and Uniformity
•Minimum and Maximum Values of IGT, VGT an IH Specified for Ease of Design
•High Immunity to dv/dt −100 V/sec Minimum at 125°C
•These are Pb−Free Devices
触点数 3
额定电压DC 800 V
额定电流 12.0 A
针脚数 3
正向电压 2.2 V
转换速率 250 V/μs
保持电流 40 mA
热阻 2.2℃/W RθJC
正向电流 12 A
保持电流Max 40 mA
工作温度Max 125 ℃
工作温度Min -40 ℃
工作结温 -40℃ ~ 125℃
工作结温Max 125 ℃
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.28 mm
高度 9.28 mm
封装 TO-220-3
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MCR12NG ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MCR12N 安森美 | 完全替代 | MCR12NG和MCR12N的区别 |
2N6509G 力特 | 类似代替 | MCR12NG和2N6509G的区别 |
TIC126N-S 伯恩斯 | 功能相似 | MCR12NG和TIC126N-S的区别 |