ON SEMICONDUCTOR MMBF4391LT1G. 场效应管, JFET
N 通道 JFET,
立创商城:
N-Channel JFET Transistor
得捷:
JFET N-CH 30V SOT23-3
欧时:
ON Semiconductor MMBF4391LT1G N通道 JFET 晶体管, Vds=30 V, Idss: 50 → 150mA, 3引脚 SOT-23封装
艾睿:
This MMBF4391LT1G JFET transistor from ON Semiconductor is an uni-polar voltage-controlled device that has a very high input electrical resistance. Its maximum power dissipation is 225 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This junction field effect transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
Allied Electronics:
MMBF4391LT1G N-channel JFET Transistor; 30 V; Idss 50 to 150mA; 3-Pin SOT-23
安富利:
Trans JFET N-CH 30V 3-Pin SOT-23 T/R
Chip1Stop:
Trans JFET N-CH 30V Automotive 3-Pin SOT-23 T/R
Verical:
Trans JFET N-CH 30V Automotive 3-Pin SOT-23 T/R
Newark:
# ON SEMICONDUCTOR MMBF4391LT1G JFET Transistor, Junction Field Effect, 30 V, 50 mA, 150 mA, -10 V, SOT-23, JFET
Win Source:
JFET N-CH 30V 0.225W SOT23
额定电压DC 30.0 V
额定电流 50.0 mA
无卤素状态 Halogen Free
击穿电压 -30.0 V
漏源极电阻 30 Ω
极性 N-Channel
耗散功率 225 mW
漏源极电压Vds 30 V
栅源击穿电压 30.0 V
击穿电压 30 V
输入电容Ciss 14pF @15VVds
额定功率Max 225 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 225 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.3 mm
高度 0.94 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MMBF4391LT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMBF4391LT1 安森美 | 完全替代 | MMBF4391LT1G和MMBF4391LT1的区别 |
MMBF4391 安森美 | 类似代替 | MMBF4391LT1G和MMBF4391的区别 |
SMMBF4391LT1G 安森美 | 类似代替 | MMBF4391LT1G和SMMBF4391LT1G的区别 |