MMBFJ177LT1G

ON SEMICONDUCTOR  MMBFJ177LT1G  晶体管, JFET, JFET, 30 V, -1.5 mA, -20 mA, 2.5 V, SOT-23, JFET

P 通道 JFET，

欧时:
ON Semiconductor MMBFJ177LT1G P通道 JFET 晶体管, Idss: 1.5 → 20mA, 3引脚 SOT-23封装

立创商城:
P 沟道 JFET 晶体管

得捷:
JFET P-CH 30V SOT23-3

贸泽:
JFET 25V 10mA

e络盟:
ON SEMICONDUCTOR  MMBFJ177LT1G.  场效应管, JFET斩波器, P沟道, 30V, SOT-23, 整卷

艾睿:
The MMBFJ177LT1G JFET transistor, developed by ON Semiconductor, can give you a high level of input resistance, perfect for controlling input voltage. Its maximum power dissipation is 225 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a single configuration. This junction field effect transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Allied Electronics:
MMBFJ177LT1G P-channel JFET Transistor; Idss 1.5 - 20mA; 3-Pin SOT-23

安富利:
Trans JFET P-CH 3-Pin SOT-23 T/R

Chip1Stop:
Trans JFET P-CH Automotive 3-Pin SOT-23 T/R

TME:
Transistor: P-JFET; unipolar; 225mW; SOT23

Verical:
Trans JFET P-CH 3-Pin SOT-23 T/R

Newark:
# ON SEMICONDUCTOR  MMBFJ177LT1G  JFET Transistor, Junction Field Effect, 30 V, -1.5 mA, -20 mA, 2.5 V, SOT-23, JFET

Win Source:
JFET P-CH 30V 0.225W SOT23