MMBFJ211

MMBFJ211 N沟道结型场效应管 25v 7~20mA SOT-23 marking/标记 G2W 射频放大器

最大源漏极电压VdsDrain-Source Voltage| 25v \---|--- 栅源极击穿电压VBRGSGate-Source Voltage| -25v 漏极电流Vgs=0VIDSSDrain Current| 7~20ma 关断电压VgsoffGate-Source Cut-off Voltage| -2.5~-4.5v 耗散功率PdPower Dissipation| 225mW/0.225W Description & Applications| N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. 描述与应用| N沟道射频放大器 该设备是专为HF/ VHF混频器/放大器和 应用程序的方法50是不足够的。足够 增益和低噪声敏感的接收器。

艾睿:
Trans JFET N-CH 3-Pin SOT-23 T/R

安富利:
Trans JFET N-CH 3-Pin SOT-23 T/R

TME:
Transistor: N-JFET; unipolar; 225mW; SOT23; 10mA

Verical:
Trans JFET N-CH 3-Pin SOT-23 T/R

Online Components:
Trans JFET N-CH 3-Pin SOT-23 T/R

Win Source:
JFET N-CH 25V 20MA SOT23