MC14023BDG

ON SEMICONDUCTOR  MC14023BDG  与非门, MC14023B系列, 3门, 3输入, 8.8 mA, 3V至18V, SOIC-14

The is a triple 3-input NAND Gate is constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS. This device find primary use is where low power dissipation and/or high noise immunity is desired.

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All outputs buffered

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Capable of driving two low-power TTL loads or one low-power schottky TTL load

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Double diode protection on all inputs

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Pin-for-Pin replacement for corresponding CD4000 series B suffix device