ON SEMICONDUCTOR MPSA06RL1G 单晶体管 双极, NPN, 80 V, 100 MHz, 625 mW, 500 mA, 100 hFE
Use this versatile NPN GP BJT from to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 625 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V.
频率 100 MHz
额定电压DC 80.0 V
额定电流 500 mA
针脚数 3
极性 NPN
耗散功率 625 mW
击穿电压集电极-发射极 80 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 100 @100mA, 1V
额定功率Max 625 mW
直流电流增益hFE 100
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 625 mW
安装方式 Through Hole
引脚数 3
封装 TO-226-3
封装 TO-226-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MPSA06RL1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MPSA06RLRAG 安森美 | 完全替代 | MPSA06RL1G和MPSA06RLRAG的区别 |
MPSA06RL1 安森美 | 完全替代 | MPSA06RL1G和MPSA06RL1的区别 |
MPSA06RLRP 安森美 | 完全替代 | MPSA06RL1G和MPSA06RLRP的区别 |