MPSW45AG

ON SEMICONDUCTOR  MPSW45AG  单晶体管 双极, 达林顿, NPN, 50 V, 100 MHz, 2.5 W, 1 A, 25000 hFE

Compared to other transistors, the NPN Darlington transistor from can provide you with a higher current gain value. This Darlington transistor array"s maximum emitter base voltage is 12 V, while its maximum base emitter saturation voltage is 2@2mA@1A V. This product"s maximum continuous DC collector current is 1 A, while its minimum DC current gain is 25000@200mA@5 V|15000@500mA@5V|4000@1A@5V. It has a maximum collector emitter saturation voltage of 1.5@2mA@1A V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 12 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C.