MMBFJ202

FAIRCHILD SEMICONDUCTOR  MMBFJ202.  晶体管, JFET, 40V, 3-SOT-23

最大源漏极电压VdsDrain-Source Voltage| 40v

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栅源极击穿电压VBRGSGate-Source Voltage| -40v

漏极电流Vgs=0VIDSSDrain Current| 0.9~4.5ma

关断电压VgsoffGate-Source Cut-off Voltage| -0.8~-4v

耗散功率PdPower Dissipation| 350mW/0.35W

Description & Applications| N-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources.

描述与应用| N-通道通用放大器 •本设备主要用于低级别的音频和通用应用高阻抗信号源设计。

得捷:
SMALL SIGNAL FIELD-EFFECT TRANSI

贸泽:
JFET N-Channel Transistor General Purpose

e络盟:
FAIRCHILD SEMICONDUCTOR  MMBFJ202  晶体管, JFET, JFET, -40 V, 900 µA, 4.5 mA, -4 V, SOT-23, JFET

艾睿:
Trans JFET N-CH 3-Pin SOT-23 T/R

富昌:
MMBFJ202系列 40 V 4.5 mA N沟道 通用 放大器 - SOT-23

TME:
Transistor: N-JFET; unipolar; 325mW; SOT23; 50mA

Verical:
Trans JFET N-CH 3-Pin SOT-23 T/R

Newark:
# FAIRCHILD SEMICONDUCTOR  MMBFJ202  JFET Transistor, Junction Field Effect, -40 V, 900 µA, 4.5 mA, -4 V, SOT-23, JFET

Win Source:
JFET N-CH 40V 350MW SOT23