MMBT3906WT1G

ON SEMICONDUCTOR  MMBT3906WT1G  单晶体管 双极, 通用, PNP, 40 V, 250 MHz, 150 mW, 200 mA, 250 hFE

小信号 PNP ，

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。

欧时:
ON Semiconductor MMBT3906WT1G , PNP 晶体管, 200 mA, Vce=40 V, HFE:30, 100 MHz, 3引脚 SOT-323 SC-70封装

得捷:
TRANS PNP 40V 0.2A SC70-3

立创商城:
MMBT3906WT1G

贸泽:
双极晶体管 - 双极结型晶体管BJT 200mA 40V PNP

e络盟:
ON SEMICONDUCTOR  MMBT3906WT1G.  双极性晶体管, PNP, 40V, SOT-323, 整卷

艾睿:
Implement this PNP MMBT3906WT1G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.

Allied Electronics:
ON Semi MMBT3906WT1G PNP Bipolar Transistor; 0.2 A; 40 V; 3-Pin SC-70

安富利:
Trans GP BJT PNP 40V 0.2A 3-Pin SC-70 T/R

Chip1Stop:
Trans GP BJT PNP 40V 0.2A Automotive 3-Pin SC-70 T/R

Verical:
Trans GP BJT PNP 40V 0.2A Automotive 3-Pin SC-70 T/R

Newark:
# ON SEMICONDUCTOR  MMBT3906WT1G  Bipolar BJT Single Transistor, General Purpose, PNP, 40 V, 250 MHz, 150 mW, 200 mA, 250 hFE

DeviceMart:
TRANS GP SS PNP 40V SOT323

Win Source:
TRANS PNP 40V 0.2A SOT323