ON SEMICONDUCTOR MMBT4124LT1G 单晶体管 双极, NPN, 25 V, 300 MHz, 225 mW, 200 mA, 60 hFE
Add switching and amplifying capabilities to your electronic circuit with this NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V.
频率 300 MHz
额定电压DC 20.0 V
额定电流 200 mA
针脚数 3
极性 NPN
耗散功率 225 mW
击穿电压集电极-发射极 25 V
集电极最大允许电流 0.2A
最小电流放大倍数hFE 120 @2mA, 1V
额定功率Max 225 mW
直流电流增益hFE 60
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300000 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
宽度 1.3 mm
封装 SOT-23-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MMBT4124LT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMBT4124 安森美 | 类似代替 | MMBT4124LT1G和MMBT4124的区别 |
MMBT4124LT1 安森美 | 类似代替 | MMBT4124LT1G和MMBT4124LT1的区别 |
MMBT4124-7-F 美台 | 功能相似 | MMBT4124LT1G和MMBT4124-7-F的区别 |