ON SEMICONDUCTOR MMBT4401WT1G 单晶体管 双极, NPN, 40 V, 250 MHz, 150 mW, 600 mA, 20 hFE
The three terminals of this NPN GP BJT from give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
频率 250 MHz
额定电压DC 40.0 V
额定电流 600 mA
针脚数 3
极性 NPN
耗散功率 150 mW
击穿电压集电极-发射极 40 V
集电极最大允许电流 0.6A
最小电流放大倍数hFE 100 @150mA, 1V
额定功率Max 150 mW
直流电流增益hFE 20
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 150 mW
安装方式 Surface Mount
引脚数 3
封装 SC-70-3
宽度 1.24 mm
封装 SC-70-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MMBT4401WT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMBT4401WT1 安森美 | 类似代替 | MMBT4401WT1G和MMBT4401WT1的区别 |
MMBT4401 飞兆/仙童 | 功能相似 | MMBT4401WT1G和MMBT4401的区别 |
MMST4401-7-F 美台 | 功能相似 | MMBT4401WT1G和MMST4401-7-F的区别 |