MMBFJ309

FAIRCHILD SEMICONDUCTOR  MMBFJ309.  射频晶体管, JFET, 25V, 3-SOT-23

最大源漏极电压VdsDrain-Source Voltage| 25v

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栅源极击穿电压VBRGSGate-Source Voltage| -25v

漏极电流Vgs=0VIDSSDrain Current| 12~30ma

关断电压VgsoffGate-Source Cut-off Voltage| -1~-4v

耗散功率PdPower Dissipation| 225mW/0.225W

Description & Applications| N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.

描述与应用| N沟道射频放大器 该设备是专为VHF/ UHF放大器，振荡器和混频器 的应用程序。共栅极放大器，16分贝在100 MHz和 12 dB，在450兆赫频率可以实现的。