MMBTA55LT1G

ON SEMICONDUCTOR  MMBTA55LT1G  单晶体管 双极, PNP, -60 V, 50 MHz, 225 mW, -500 mA, 100 hFE

小信号 PNP ，

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。

得捷:
TRANS PNP 60V 0.5A SOT23-3

立创商城:
MMBTA55LT1G

欧时:
ON Semiconductor MMBTA55LT1G , PNP 晶体管, 500 mA, Vce=60 V, HFE:100, 100 MHz, 3引脚 SOT-23封装

e络盟:
单晶体管 双极, 通用, PNP, -60 V, 50 MHz, 225 mW, -500 mA, 100 hFE

艾睿:
The versatility of this PNP MMBTA55LT1G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 4 V. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

Allied Electronics:
ON Semi MMBTA55LT1G PNP Bipolar Transistor; 0.5 A; 60 V; 3-Pin SOT-23

安富利:
Trans GP BJT PNP 60V 0.5A 3-Pin SOT-23 T/R

Chip1Stop:
Trans GP BJT PNP 60V 0.5A 300mW Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT PNP 60V 0.5A Automotive 3-Pin SOT-23 T/R

Newark:
# ON SEMICONDUCTOR  MMBTA55LT1G  Bipolar BJT Single Transistor, General Purpose, PNP, -60 V, 50 MHz, 225 mW, -500 mA, 100 hFE

Win Source:
TRANS PNP 60V 0.5A SOT23

DeviceMart:
TRANS DRIVER SS PNP 60V SOT23