MMBT2369

FAIRCHILD SEMICONDUCTOR  MMBT2369  单晶体管 双极, NPN, 15 V, 350 mW, 200 mA, 40 hFE

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 40V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 15V 集电极连续输出电流ICCollector CurrentIC| 200mA/0.2A 截止频率fTTranstion FrequencyfT| 直流电流增益hFEDC Current GainhFE| 40~120 管压降VCE（sat）Collector-Emitter Saturation Voltage| 200mV~500mV 耗散功率PcPower Dissipation| 225mW/0.225W Description & Applications| NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. 描述与应用| NPN开关 该设备是专为高速饱和开关集电极 10 mA至100 mA的电流