ON SEMICONDUCTOR MMBF0201NLT1G. 场效应管, MOSFET, N沟道, SOT-23, SMD, 20V
N-Channel 20V 300mA Ta 225mW Ta Surface Mount SOT-23-3 TO-236
欧时:
ON Semiconductor, MMBF0201NLT1G
得捷:
MOSFET N-CH 20V 300MA SOT23-3
立创商城:
MMBF0201NLT1G
贸泽:
MOSFET 20V 300mA N-Channel
e络盟:
ON SEMICONDUCTOR MMBF0201NLT1G. 场效应管, MOSFET, N沟道, SOT-23, SMD, 20V
艾睿:
If you need to either amplify or switch between signals in your design, then ON Semiconductor&s;s MMBF0201NLT1G power MOSFET is for you. Its maximum power dissipation is 225 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 20V 0.3A 3-Pin SOT-23 T/R
Chip1Stop:
Trans MOSFET N-CH 20V 0.3A 3-Pin SOT-23 T/R
TME:
Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23
Verical:
Trans MOSFET N-CH 20V 0.3A 3-Pin SOT-23 T/R
Newark:
# ON SEMICONDUCTOR MMBF0201NLT1G MOSFET Transistor, N Channel, 300 mA, 20 V, 0.75 ohm, 10 V, 1.7 V
力源芯城:
0.3A,20V,SOT-223-3,N沟道功率MOSFET
Win Source:
MOSFET N-CH 20V 300MA SOT-23
额定电压DC 20.0 V
额定电流 300 mA
通道数 1
针脚数 3
漏源极电阻 0.75 Ω
极性 N-Channel
耗散功率 225 mW
阈值电压 1.7 V
输入电容 45.0 pF
漏源极电压Vds 20 V
漏源击穿电压 62 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 300 mA
上升时间 2.5 ns
输入电容Ciss 45pF @5VVds
额定功率Max 225 mW
下降时间 0.8 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 225mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.3 mm
高度 0.94 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MMBF0201NLT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMBF0201NLT1 安森美 | 类似代替 | MMBF0201NLT1G和MMBF0201NLT1的区别 |
IRLML2402TRPBF 英飞凌 | 功能相似 | MMBF0201NLT1G和IRLML2402TRPBF的区别 |
2N7002 飞兆/仙童 | 功能相似 | MMBF0201NLT1G和2N7002的区别 |