STMICROELECTRONICS MJD3055T4 单晶体管 双极, NPN, 60 V, 20 W, 10 A, 5 hFE
NPN 功率,STMicroelectronics
### 双极晶体管,STMicroelectronics
STMicroelectronics 的各种 NPN 和 PNP ,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
得捷:
TRANS NPN 60V 10A DPAK
欧时:
### NPN 功率晶体管,STMicroelectronics### 双极晶体管,STMicroelectronicsSTMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
贸泽:
Bipolar Transistors - BJT NPN Gen Pur Switch
艾睿:
If you require a general purpose BJT that can handle high voltages, then the NPN MJD3055T4 BJT, developed by STMicroelectronics, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 20000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
安富利:
Trans GP BJT NPN 60V 10A 3-Pin2+Tab DPAK T/R
富昌:
MJD3055 系列 NPN 60 V 10 A 表面贴装 互补 功率晶体管 - TO-252
Chip1Stop:
Trans GP BJT NPN 60V 10A 3-Pin2+Tab DPAK T/R
Verical:
Trans GP BJT NPN 60V 10A 20000mW 3-Pin2+Tab DPAK T/R
Newark:
# STMICROELECTRONICS MJD3055T4 Bipolar BJT Single Transistor, NPN, 60 V, 20 W, 10 A, 5
Win Source:
TRANS NPN 60V 10A DPAK
频率 2 MHz
额定电压DC 60.0 V
额定电流 10.0 A
针脚数 3
极性 NPN
耗散功率 20 W
增益频宽积 2 MHz
集电极击穿电压 70.0 V
击穿电压集电极-发射极 60 V
最小电流放大倍数hFE 20 @4A, 4V
最大电流放大倍数hFE 100
额定功率Max 20 W
直流电流增益hFE 5
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 20000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MJD3055T4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
MJD200T4G 安森美 | 功能相似 | MJD3055T4和MJD200T4G的区别 |
MJD3055G 安森美 | 功能相似 | MJD3055T4和MJD3055G的区别 |