MUN5235T1G

ON SEMICONDUCTOR  MUN5235T1G  晶体管 双极预偏置/数字, AEC-Q100, 50 V, 100 mA, 2.2 kohm, 4.7 kohm, 0.47 电阻比率, SOT-323 新

- 双极 BJT - 单，预偏置 NPN - 预偏压 50 V 100 mA 202 mW 表面贴装型 SC-70-3（SOT323）

欧时:
ON Semiconductor, MUN5235T1G

得捷:
TRANS PREBIAS NPN 50V SC70-3

立创商城:
MUN5235T1G

e络盟:
小信号预偏晶体管

艾睿:
You can apply the benefits of traditional BJTs to digital circuits using the NPN MUN5235T1G digital transistor, developed by ON Semiconductor. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 310 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

安富利:
Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R

Chip1Stop:
Trans Digital BJT NPN 50V 100mA 310mW Automotive 3-Pin SC-70 T/R

Verical:
Trans Digital BJT NPN 50V 100mA 310mW Automotive 3-Pin SC-70 T/R

Newark:
# ON SEMICONDUCTOR  MUN5235T1G  BRT TRANS, NPN, 50V, SOT-323-3 New

Win Source:
TRANS PREBIAS NPN 202MW SC70-3