MMUN2235LT1G

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MMUN2235LT1G概述

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

Features

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MMUN2235LT1G中文资料参数规格
技术参数

无卤素状态 Halogen Free

极性 NPN

耗散功率 400 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 80 @5mA, 10V

额定功率Max 246 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 400 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MMUN2235LT1G
型号: MMUN2235LT1G
描述:晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
替代型号MMUN2235LT1G
型号/品牌 代替类型 替代型号对比

MMUN2235LT1G

ON Semiconductor 安森美

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