晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
无卤素状态 Halogen Free
极性 NPN
耗散功率 400 mW
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 80 @5mA, 10V
额定功率Max 246 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 400 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MMUN2235LT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
DTC123E 安森美 | 类似代替 | MMUN2235LT1G和DTC123E的区别 |
DTC123JUAFRAT106 罗姆半导体 | 类似代替 | MMUN2235LT1G和DTC123JUAFRAT106的区别 |
DTC123JM3T5G 安森美 | 功能相似 | MMUN2235LT1G和DTC123JM3T5G的区别 |